View IRLML0100TRPBF-1_8603619.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet power mosfet micro3 tm (sot-23) d s g 3 1 2 absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient CCC 100 r ja junction-to-ambient (t<10s) CCC 99 w c/w a max. 1.6 1.3 -55 to + 150 16 0.01 100 1.3 0.8 7.0
features benefits industry-standard pinout sot-23 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 100 v r ds(on) max (@v gs = 10v) 220 q g (typical) 2.5 nc i d (@t a = 25c) 1.6 a m form quantity IRLML0100TRPBF-1 micro3 ? (sot-23) tape and reel 3000 IRLML0100TRPBF-1 package type standard pack orderable part number base part number

! downloaded from: http:///

!
electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.10 CCC v/c CCC 190 235 CCC 178 220 v gs(th) gate threshold voltage 1.0 CCC 2.5 v i dss CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 r g internal gate resistance CCC 1.3 CCC gfs forward transconductance 5.7 CCC CCC s q g total gate charge CCC 2.5 CCC q gs gate-to-source charge CCC 0.5 CCC q gd gate-to-drain ("miller") charge CCC 1.2 CCC t d(on) turn-on delay time CCC 2.2 CCC t r rise time CCC 2.1 CCC t d(off) turn-off delay time CCC 9.0 CCC t f fall time CCC 3.6 CCC c iss input capacitance CCC 290 CCC c oss output capacitance CCC 27 CCC c rss reverse transfer capacitance CCC 13 CCC source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 20 30 ns q rr reverse recovery charge CCC 13 20 nc CCC CCC CCC CCC pf a 1.1 7.0 v dd =50v na nc ns v ds = v gs , i d = 25 a v ds =100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c r ds(on) v gs = 10v, i d = 1.6a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 1.3a mosfet symbol showing the v ds =50v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz r g = 6.8 v gs = 4.5v di/dt = 100a/ s v gs = 16v v gs = -16v t j = 25c, i s = 1.1a, v gs = 0v integral reverse p-n junction diode. v ds = 50v, i d = 1.6a i d = 1.6a i d = 1.0a t j = 25c, v r = 50v, i f =1.1a repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. surface mounted on 1 in square cu board refer to application note #an-994. downloaded from: http:///
"

!
fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 1.6a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v 60 s p ulse width tj = 25c 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s p ulse width tj = 150c 2.25v vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v downloaded from: http:///

!
fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 01234567 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 1.6a 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec downloaded from: http:///
#

!
fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit $
1 0.1 % $ %& $ + - $ 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///
'

!
fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform 1k vcc dut 0 l s 20k vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 2 4 6 8 10 v gs, gate -to -source voltage (v) 150 200 250 300 350 400 450 500 550 600 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 1.6a t j = 25c t j = 125c 0 2 4 6 8 i d , drain current (a) 170 190 210 230 250 270 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v vgs = 4.5v downloaded from: http:///

!
fig 15. typical threshold voltage vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25ua i d = 250ua 1e-005 0.0001 0.001 0.01 0.1 1 10 time (sec) 0 20 40 60 80 100 p o w e r ( w ) downloaded from: http:///
(

!
micro3 (sot-23 / to-236ab) part marking information

0.08 0.88 0.01 0.89 0.95 bsc millimeters min e e e1 d la a1a2 c mo b sy mi nmax max .036 .0375 bsc di me ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bs c l1 l 0.40 0.60 .0118 bsc aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 d 5 6 3 12 ccc cb a b 5 6 e e1 a2 a a1 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 bsc .075 bsc .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 e bbb cb a l2 0.54 r e f l2 .021 re f not e s 1. dime ns ioning and t ole rancing per as me y14.5m-1994. 4 dat um plane h is locat ed at the mold parting line. 5 dat um a and b t o b e det er mine d at dat um plane h . 6 dime ns ions d and e1 are me as ure d at dat um plane h . 2. dimens ions are s h own in millime t e rs [inches ] 3. cont rolling dime ns ion: mil lime t e r. 7 dimension l is the lead lengt h for soldering to a substrate. 8. outline conforms to jedec outline to-236ab. dimens ions does not incl ude mold prot rus ions or i nt e r l e ad f l as h . mol d p r ot r u s ion or i nt e r l e ad f l as h s hall not exce ed 0.25 mm [.010 inch] per s ide. 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] r e comme nde d f oot p r i nt 3x 3x l e ad as s i gnme nt 1. gat e 2. s ource 3. drain 0.08 0.88 0.01 0.89 0.95 bs c mi l l i me t e r s mi n e e e1 d l a a1a2 c mo b sy mi n max max .036 .0375 bs c dime ns ions inches b0.3 0 bbb 0.15 .008 ccc .006 0.25 b s c l1 l 0.40 0.60 .0118 bs c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 2.10 e1 1.90 bs c .075 bsc .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 0.54 ref l2 .021 ref f = irlml6401 aa 27 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a le t t e r y8 3 12 5 47 60 9 y c 03 wor k we e k 0102 a wb 04 d 24 26 25 xz y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c bj y 51 29 2830 c bd 50 x 52 z note: a l i ne above the work week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246 indus trial version 2007 ye ar 2003 20012002 2005 20042006 2007 2009 20082010 2003 2001 ye ar 20022005 20042006 2009 20082010 2017 2013 2011 2012 2015 2014 2016 2017 2019 2018 2020 2013 2011 2012 2015 2014 2016 2019 2018 2020 downloaded from: http:///
)

!
?

2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) revision history date comment 10/27/2014 ? updated partmarking to reflect industrial partmarking on page 8. downloaded from: http:///

▲Up To Search▲

Price & Availability of IRLML0100TRPBF-1

	To Download IRLML0100TRPBF-1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .